Heat treatment apparatus for heating substrate by light irradiation
US9180550B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jan 29, 2013 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Nov 11, 2033 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB23K2103/56
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
The temperature of a semiconductor wafer is raised by light irradiation heating performed by halogen lamps. An infrared ray emitted from the semiconductor wafer whose temperature has been raised transmits through an infrared-transparent window made of silicon, and then is detected by an infrared camera. The infrared camera two-dimensionally detects the temperature of an entire surface of the semiconductor wafer. Based on a result of the detection obtained by the infrared camera, a temperature drop region having a relatively low temperature among the region of the semiconductor wafer is irradiated with laser light emitted from a laser light emission part. Accordingly, without rotating the semiconductor wafer, a temperature distribution can be made uniform with a high accuracy throughout the entire surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.