Polishing pad, manufacturing method therefor, and method for manufacturing a semiconductor device
US9181386B2 · kind B2 · utility
2Cited by
7References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 17, 2011 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Feb 1, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC08G2110/0025
- WIPO fieldMacromolecular chemistry, polymers
- WIPO sectorChemistry
Abstract
A polishing pad having a polishing layer comprising a thermoset polyurethane foam, wherein the thermoset polyurethane foam contains, as raw material components, an isocyanate component, and active-hydrogen-containing compounds, and the active-hydrogen-containing compounds comprise one or more polyol compounds (each) having two or more functional groups, and a monool compound having one functional group.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.