Density multiplication and improved lithography by directed block copolymer assembly
US9183870B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 5, 2008 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | Mar 21, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2201/0149
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Methods to pattern substrates with dense periodic nanostructures that combine top-down lithographic tools and self-assembling block copolymer materials are provided. According to various embodiments, the methods involve chemically patterning a substrate, depositing a block copolymer film on the chemically patterned imaging layer, and allowing the block copolymer to self-assemble in the presence of the chemically patterned substrate, thereby producing a pattern in the block copolymer film that is improved over the substrate pattern in terms feature size, shape, and uniformity, as well as regular spacing between arrays of features and between the features within each array compared to the substrate pattern. In certain embodiments, the density and total number of pattern features in the block copolymer film is also increased. High density and quality nanoimprint templates and other nanopatterned structures are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.