Semiconductor structures with bridging films and methods of fabrication
US9184288B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 13, 2014 |
| Grant date | Nov 10, 2015 |
| Priority date | — |
| Expiry date | May 22, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor structures and fabrication methods are provided having a bridging film which facilitates adherence of both an underlying layer of dielectric material and an overlying stress-inducing layer. The method includes, for instance, providing a layer of dielectric material, with at least one gate structure disposed therein, over a semiconductor substrate; providing a bridging film over the layer of dielectric material with the at least one gate structure; and providing a stress-inducing layer over the bridging film. The bridging film is selected to facilitate adherence of both the underlying layer of dielectric material and the overlying stress-inducing layer by, in part, forming a chemical bond with the layer of dielectric material, without forming a chemical bond with the stress-inducing layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.