Semiconductor device and formation thereof

US9184289B2 · kind B2 · utility

Assignee

• TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. · TW

Inventors

• Mao-Lin Huang · Hsinchu, TW
• Chien-Hsun Wang · Hsinchu, TW
• Chun-Hsiung Lin · Dashulong, TW
• Meng-Ku Chen · New Taipei, TW
• Li-Ting Wang · Meekrap-oord, CN
• Hung-Ta Lin · Hsinchu, TW

Key dates

• Filing date: Nov 8, 2013
• Grant date: Nov 10, 2015
• Expiry date: Nov 8, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/85
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.