Magnetoresistive element

US9184374B2 · kind B2 · utility

Inventors

• Kazuya SAWADA · Seoul, KR
• Toshihiko Nagase · Sagamihara, JP
• Youngmin EEH · Seongnam-si, KR
• Koji Ueda · Kamakura, JP
• Daisuke Watanabe · Chigasaki, JP
• Masahiko Nakayama · Yokohama, JP
• Tadashi Kai · Yokohama, JP
• Hiroaki Yoda · Kawasaki, JP

Key dates

• Filing date: Aug 9, 2013
• Grant date: Nov 10, 2015
• Expiry date: Aug 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N50/85

Abstract

According to one embodiment, a magnetoresistive element includes first, second and third magnetic layers, and first and second nonmagnetic layers. The third magnetic layer has stack layers including a first stack layer close to the second magnetic layer, and a second stack layer far from the second magnetic layer. Each of the first and second stack layers includes a first layer made of a ferromagnetic material and a second layer made of a nonmagnetic material, and a first ratio of a film thickness of the first layer to that of the second layer in the first stack layer is higher than a second ratio of a film thickness of the first layer to that of the second layer in the second stack layer.