Patent · US Active

Method for etching a complex pattern

US9187320B2 · kind B2 · utility

2Cited by

4References

16Claims

0Family size

Assignee

COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventor

Bernard Diem · Échirolles, FR

Key dates

Filing date	Jan 3, 2013
Grant date	Nov 17, 2015
Priority date	—
Expiry date	Jan 3, 2033

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2201/014
WIPO fieldMicro-structural and nano-technology
WIPO sectorChemistry

Abstract

A method for etching a desired complex pattern in a first face of a substrate, including: simultaneous etching of at least a first and a second sub-pattern through the first face of the substrate, the etched sub-patterns being separated by at least one separating wall, a width of the first sub-pattern being greater than a width of the second sub-pattern at the first face, and a depth of the first sub-pattern being greater than a depth of the second sub-pattern in a direction perpendicular to the said first face; and removing or eliminating the separating wall to expose the desired complex pattern.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.