Titanium-aluminum alloy deposition with titanium-tetrahydroaluminate bimetallic molecules
US9187511B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 28, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Feb 2, 2034 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC07F5/06
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
Disclosed are titanium-tetrahydroaluminates precursors, their method of manufacture, and their use in the deposition of titanium-aluminum-containing films. The disclosed precursors have the formulae Ti(AlH4)3—X, Ti(AlH4)2L and Ti(AlH4)L2. The disclosed precursors may be used to deposit pure titanium-aluminum (TiAl), titanium-aluminum nitride (TiAlN), titanium-aluminum carbide (TiAlC), titanium-aluminum carbonitride (TiAlCN), titanium-aluminum silicide ((TiAl)Si), titanium-aluminum siliconitride ((TiAl)SiN), titanium-aluminum boron ((TiAl)B), titanium-aluminum boron nitride ((TiAl)BN), or titanium-aluminum oxide (TiAlO). or any other titanium-aluminum-containing films. The titanium-aluminum-containing films may be deposited using the disclosed precursors in thermal and/or plasma-enhanced CVD, ALD, pulse CVD or any other type of depositions methods.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.