Single crystal manufacturing apparatus
US9187844B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 3, 2010 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 28, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A single-crystal manufacturing apparatus for manufacturing a single crystal ingot according to the Czochralski method including: a crucible that contains a raw material melt; a heater having a cylindrical heat generating portion that surrounds the crucible; a main chamber that accommodates the heater; a heater electrode that supports the heater and supplies current to the heater; and a heat insulating plate provided below the cylindrical heat generating portion of the heater, wherein the heat insulating plate is fixed to and supported by the heater electrode through an insulating stationary member, and an insulating support member is provided on an upper surface of the heat insulating plate at a position at which the insulating support member faces a lower end of the cylindrical heat generating portion. Provided is a single-crystal manufacturing apparatus that can inhibit heater deformation and prevent deterioration of heat efficiency.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.