Polygon-based optical proximity correction
US9189588B2 · kind B2 · utility
3Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 10, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2034 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/36
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Methods and systems for design of integrated circuits including performing OPC are discussed. In one embodiment, design data having a geometric feature is provided. A base feature is formed from the geometric feature, which has a substantially linear edge. A pseudo dissection point is determined on the base feature. Add or trim a polygon from the base feature to form a modified feature. An OPC process is performed on the modified feature to generate an output design. The output design is used to fabricate a semiconductor device on a semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.