Low-defect semiconductor device and method of manufacturing the same
US9190270B2 · kind B2 · utility
1Cited by
43References
19Claims
0Family size
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Key dates
| Filing date | Jun 3, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jun 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8252
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.