Method of depositing metallic layers based on nickel or cobalt on a semiconducting solid substrate; kit for application of said method
US9190283B2 · kind B2 · utility
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2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 18, 2012 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Apr 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a kit intended for the deposition of nickel or cobalt in the cavities of a semiconductor substrate intended to form through-silicon vias (TSV) for making interconnections in integrated circuits in three dimensions.The invention also relates to a method of metallization of the insulating surface of such a substrate which comprises contacting the surface with a liquid aqueous solution containing: The step coverage of the layer of nickel or cobalt obtained can be greater than 80%, which facilitates subsequent filling of the vias with copper by electrodeposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.