Composition for advanced node front-and-back-end of line chemical mechanical polishing
US9190286B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jan 16, 2015 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 16, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present disclosure is directed to a highly dilutable chemical mechanical polishing concentrate comprising an abrasive, an acid, a stabilizer, and water with a point-of-use pH ranging from 2.2-3.5 for planarizing current and next generation semiconductor integrated circuit FEOL/BEOL substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.