Method of fabricating fin FET and method of fabricating device
US9190287B2 · kind B2 · utility
3Cited by
16References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 21, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jan 21, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0241
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In fin FET fabrication, side walls of a semiconductor fin formed on a substrate have certain roughness. Using such fins having roughness may induce variations in characteristics between transistors due to their shapes or the like. An object of the present invention is to provide a fin FET fabrication method capable of improving device characteristic by easily reducing the roughness of the side walls of fins after formation. In one embodiment of the present invention, side walls of a semiconductor fin are etched by an ion beam extracted from a grid to reduce the roughness of the side walls.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.