Methods and apparatus for separating a substrate
US9190294B2 · kind B2 · utility
Inventor
Key dates
| Filing date | Dec 10, 2012 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jul 13, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/50
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
This invention relates to slicing a thin semiconductor substrate from side wall into two substrates of half thickness. The substrate slicing process involves a laser irradiation step. The apparatus for substrate slicing comprises two opposite-facing substrate chucks, with a gap in between for the substrate to pass through.The present invention is further directed to methods and apparatus of separating a continuous thin layer of materials from side wall of a rotating ingot. It can be accomplished by a laser irradiation on the ingot side wall from a tangential direction. A film can be deposited on/bonded to the ingot side wall prior to the separation of the thin film layers. The resulting thin layer of materials can be pulled away from the ingot by a substrate chuck.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.