Film forming method and recording medium for performing the method
US9190298B2 · kind B2 · utility
3Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 3, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Mar 3, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67017
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of manufacturing a semiconductor device is provided. The method includes treating a surface of an insulating film formed on a substrate by supplying a first precursor including a predetermined element and a halogen group to the substrate, and forming a thin film including the predetermined element on the treated surface of the insulating film by performing a cycle a predetermined number of times. The cycle includes supplying a second precursor including the predetermined element and the halogen group to the substrate, and supplying a third precursor to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.