Three-dimensional structured memory devices
US9190416B2 · kind B2 · utility
5Cited by
3References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Apr 28, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/324
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In various embodiments, a three-dimensional structured nonvolatile semiconductor memory devices and methods for manufacturing the devices are disclosed. One such device includes an n-type doped region at a source/drain region; a p-type doped region at the source/drain region; and a diffusion barrier material between the n-type doped region and the p-type doped region. The n-type doped region is substantially isolated from the p-type doped region. Other embodiments are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.