Semiconductor device and semiconductor device manufacturing method
US9190475B2 · kind B2 · utility
1Cited by
1References
19Claims
0Family size
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Key dates
| Filing date | Sep 13, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Nov 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a p-type metal oxide semiconductor layer; a source electrode connected with the p-type metal oxide semiconductor layer; a drain electrode connected with the p-type metal oxide semiconductor layer; and a gate electrode arranged to oppose to a part of the p-type metal oxide semiconductor layer. The gate electrode and the drain electrode are separated from each other in a top view.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.