Method and contact structure for coupling a doped body region to a trench electrode of a semiconductor device
US9190480B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Dec 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor body has a first surface, a second opposing surface, an edge, an active device region, and an edge termination region. A trench extends from the first surface into the semiconductor body in the edge termination region and includes sidewalls and an insulated electrode. A first conductivity type doped region extends from the first surface into the semiconductor body in the edge termination region and has a planar outer surface along the first surface that adjoins the trench at a corner of the trench sidewall and the first surface and has a side surface extending from the corner along the trench sidewall. A first interconnect contacts the trench electrode. A second interconnect contacts the outer surface and the side surface. A contact couples the first doped region to the trench electrode and has a bottom surface coplanar with the first surface from a contact edge to the corner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.