Oxide semiconductor, thin film transistor including the same, and thin film transistor array panel including the same
US9190523B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Jul 20, 2012 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An oxide semiconductor includes a first material including at least one selected from the group consisting of zinc (Zn) and tin (Sn), and a second material, where a value acquired by subtracting an electronegativity difference value between the second material and oxygen (O) from the electronegativity difference value between the first material and oxygen (O) is less than about 1.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.