Junction field effect transistor
US9190536B1 · kind B1 · utility
14Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 5, 2014 |
| Grant date | Nov 17, 2015 |
| Priority date | — |
| Expiry date | Jun 5, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A junction field effect transistor is disclosed. The junction field effect transistor includes a first doped region and a second doped region. The first doped region includes a source and a drain. The second doped region includes a gate. The first doped region and the second doped region have a U-shape PN junction there between. The U-shape PN junction is between the source and the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.