Reactor for producing polycrystalline silicon, system for producing polycrystalline silicon, and process for producing polycrystalline silicon
US9193596B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 9, 2010 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Jan 19, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P20/10
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
An inner wall 11 of a reactor 10 has a two-layer structure: an anticorrosive layer 11a comprising an alloy material having high anticorrosiveness is provided on the inner side of the reactor contacting a corrosive process gas, and a heat conductive layer 11b for efficiently conducting the heat within the reactor 10 from an inner wall surface to a coolant flow passage 13 is provided on the outer side of the reactor (outer-wall side). The anticorrosive layer 11a comprises an alloy material having a composition for which a value R, defined by R=[Cr]+[Ni]−1.5 [Si], is not less than 40% wherein [Cr] is a mass content (% by mass) of chromium (Cr), [Ni] is a mass content (% by mass) of nickel (Ni), and [Si] is a mass content (% by mass) of silicon (Si).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.