Method for preparing semiconductor devices applied in flip chip technology
US9196534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2013 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | May 7, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/18301
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for preparing semiconductor devices in a flip chip process comprises forming deep grooves surrounding each of the semiconductor chips; depositing a first plastic package material to form a first plastic package layer covering front surface of the semiconductor wafer and filling the deep grooves; depositing a metal layer at back surface of the semiconductor wafer after grinding; grinding an outermost portion of the metal layer thus forming a ring area located at back surface around edge of the semiconductor wafer not covered by the metal layer; cutting the first plastic package layer, the semiconductor wafer, the metal layer and the first plastic package material filled in the deep grooves along a straight line formed by two ends of each of the deep grooves filled with the first plastic package material; and picking up the semiconductor devices and mounting on a substrate without flipping the semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.