Alpha and Omega Semiconductor, Ltd.
739Patents
722Active
739Granted
61Portfolio score
Filing activity: Aug 25, 1998 → Jun 13, 2021 · 234 expiring within 5 years
Most-cited patents
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8119482B2 | MOSFET using gate work function engineering for switching applications | Electricity | 123 | Active |
| US8299494B2 | Nanotube semiconductor devices | Electricity | 60 | Active |
| US7868431B2 | Compact power semiconductor package and method with stacked inductor and integrated circuit die | Electricity | 59 | Active |
| US9697450B1 | Magnetic stripe data transmission system and method for reliable data transmission and low power consumption | Physics | 58 | Active |
| US7781826B2 | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter | Electricity | 47 | Active |
| US7786837B2 | Semiconductor power device having a stacked discrete inductor structure | Electricity | 43 | Active |
| US7910486B2 | Method for forming nanotube semiconductor devices | Electricity | 37 | Active |
| US7884696B2 | Lead frame-based discrete power inductor | Electricity | 37 | Active |
| US8218276B2 | Transient voltage suppressor (TVS) with improved clamping voltage | Electricity | 35 | Active |
| US7880223B2 | Latch-up free vertical TVS diode array structure using trench isolation | Electricity | 33 | Active |
| US7285822B2 | Power MOS device | Electricity | 32 | Expired |
| US8503141B2 | Transient voltage suppressor (TVS) with improved clamping voltage | Electricity | 31 | Active |
| US8575695B2 | Lateral super junction device with high substrate-drain breakdown and built-in avalanche clamp diode | Electricity | 31 | Active |
| US7538997B2 | Circuit configurations to reduce snapback of a transient voltage suppressor | Electricity | 30 | Active |
| US8753935B1 | High frequency switching MOSFETs with low output capacitance using a depletable P-shield | Electricity | 29 | Active |
| US7554839B2 | Symmetric blocking transient voltage suppressor (TVS) using bipolar transistor base snatch | Emerging Cross-Sectional Technologies | 29 | Active |
| US8431470B2 | Approach to integrate Schottky in MOSFET | Electricity | 28 | Active |
| US8110869B2 | Planar SRFET using no additional masks and layout method | Electricity | 28 | Active |
| US8338854B2 | TVS with low capacitance and forward voltage drop with depleted SCR as steering diode | Electricity | 27 | Active |
| US7208818B2 | Power semiconductor package | Electricity | 27 | Expired |
| US7829947B2 | Bottom-drain LDMOS power MOSFET structure having a top drain strap | Electricity | 26 | Active |
| US8338915B2 | Circuit configuration and manufacturing processes for vertical transient voltage suppressor (TVS) and EMI filter | Electricity | 25 | Active |
| US7892924B1 | Method for making a charge balanced multi-nano shell drift region for superjunction semiconductor device | Electricity | 25 | Active |
| US8062932B2 | Compact semiconductor package with integrated bypass capacitor and method | Electricity | 24 | Active |
| US7256446B2 | One time programmable memory cell | Electricity | 24 | Expired |
Source: USPTO / EPO open patent data. Counts and citation impact are objective bibliographic measures.