Method for manufacturing semiconductor devices

US9196542B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Jun Wang · Nanjing, CN
• Po-Chao Tsao · Taipei, TW
• Chia-Jui Liang · Tainan, TW
• Shih-Fang Tzou · Tainan, TW
• Chien-Ting Lin · Tainan, TW

Key dates

• Filing date: May 22, 2013
• Grant date: Nov 24, 2015
• Expiry date: Nov 26, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/797

Abstract

A method for manufacturing a semiconductor device is provided. A first stack structure and a second stack structure are formed to respectively cover a portion of a first fin structure and a second fin structure. Subsequently, a spacer is respectively formed on the sidewalls of the fin structures through an atomic layer deposition process and the composition of the spacers includes silicon carbon nitride. Afterwards, a interlayer dielectric is formed and etched so as to expose the hard mask layers. A mask layer is formed to cover the second stack structure and a portion of the dielectric layer. Later, the hard mask layer in the first stack structure is removed under the coverage of the mask layer. Then, a dummy layer in the first stack structure is replaced with a conductive layer.