Metal gate transistor

US9196546B2 · kind B2 · utility

Assignee

• UNITED MICROELECTRONICS CORP. · TW

Inventors

• Shih-Fang Tzou · Tainan, TW
• Chien-Ming Lai · Tainan, TW
• Yi-Wen Chen · San Diego, US
• Hung-Yi Wu · Keelung, TW
• Tong-Jyun Huang · Tainan, TW
• Chien-Ting Lin · Tainan, TW
• Chun-Hsien Lin · Tainan, TW

Key dates

• Filing date: Sep 13, 2013
• Grant date: Nov 24, 2015
• Expiry date: Nov 9, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/038

Abstract

A metal gate transistor is disclosed. The metal gate transistor includes a substrate, a metal gate on the substrate, and a source/drain region in the substrate. The metal gate further includes a high-k dielectric layer, a bottom barrier metal (BBM) layer on the high-k dielectric layer, a first work function layer on the BBM layer, a second work function layer between the BBM layer and the first work function layer, and a low resistance metal layer on the first work function layer. Preferably, the first work function layer includes a p-type work function layer and the second work function layer includes a n-type work function layer.