Semiconductor device having metal bit line

US9196619B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventor

• Nan Wu · Beijing, CN

Key dates

• Filing date: Jun 24, 2014
• Grant date: Nov 24, 2015
• Expiry date: Jun 24, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/485

Abstract

Disclosed herein is a device that includes: a semiconductor substrate including a memory cell region and a peripheral circuit region arranged around the memory cell region; an element isolation region formed in the memory cell region and the peripheral circuit region; a cell active region defined by the element isolation region formed in the memory cell region; a first interlayer insulation film disposed on the cell active region, the first interlayer insulation film having a bit contact hole passing therethrough to expose a portion of an upper surface of the cell active region; and a bit line having a first metal laminated film, the bit line being disposed on the first interlayer insulation film so as to fill the bit contact hole.