Patent · US Active

Tensile nitride profile shaper etch to provide void free gapfill

US9196684B2 · kind B2 · utility

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19Claims

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Assignee

GlobalFoundries Inc. · KY

Inventors

Kai Frohberg · Meißen, DE
Peter Moll · Dresden, DE
Dominik Olligs · Dresden, DE
Heike Scholz · Darmstadt, DE

Key dates

Filing date	Apr 16, 2014
Grant date	Nov 24, 2015
Priority date	—
Expiry date	Apr 16, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/038

Abstract

A method of reducing the impact of FEoL topography on dual stress liner depositions and the resulting device are disclosed. Embodiments include forming a first nitride layer between and over a pFET and an nFET; thinning the first nitride layer; forming a second nitride layer over the first nitride layer; and removing the first and the second nitride layers from over the pFET.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.