Programmable device with a metal oxide semiconductor field effect transistor

US9196749B1 · kind B1 · utility

Assignee

• Altera Corporation · US

Inventors

• Charu Sardana · San Jose, US
• Albert Ratnakumar · San Jose, US
• Qi Xiang · San Jose, US
• Bradley Jensen · San Jose, US

Key dates

• Filing date: Dec 30, 2011
• Grant date: Nov 24, 2015
• Expiry date: Aug 24, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D48/30

Abstract

A programmable device with a metal oxide semiconductor field effect transistor (MOSFET) surrounded by a programmable substrate region is described. The MOSFET has a source and drain region separated by a channel region with an insulating region and gate disposed above the channel region. A junction disposed within the substrate region controls the programmable substrate region. Biasing the junction depletes the substrate region, which isolates the body of the MOSFET from a secondary well. When the junction is left unbiased, the body of the MOSFET is electrically coupled to the secondary well.