Formation of group III-V material layers on patterned substrates
US9196795B2 · kind B2 · utility
6Cited by
3References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2014 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Jun 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods of epitaxy of gallium nitride, and other such related films, and light emitting diodes on patterned sapphire substrates, and other such related substrates, are described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.