Semiconductor light-emitting device and fabricating method thereof
US9196798B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2014 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Aug 29, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A semiconductor light-emitting device including an epitaxial structure, a first electrode structure, a second electrode structure, a light reflective metal layer, a resistivity-enhancing structure and a protection ring is provided. The light-emitting epitaxial structure has a first surface and a second surface. The light-emitting epitaxial structure has a first zone and a second zone. The first electrode structure is disposed within the first zone. The second electrode structure is disposed within the second zone. The light reflective metal layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed in contact with a surface of the light reflective metal layer and corresponding to a position of the first electrode structure. The protection ring has a first portion and a second portion. The first portion surrounds a sidewall of the light reflective metal layer. The second portion corresponds to the second electrode structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.