Magnetoresistive effect element
US9196823B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 5, 2013 |
| Grant date | Nov 24, 2015 |
| Priority date | — |
| Expiry date | Jan 25, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.