Chemical-mechanical planarization composition having benzenesulfonic acid and per-compound oxidizing agents, and associated method for use
US9200180B2 · kind B2 · utility
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15Claims
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Key dates
| Filing date | Apr 7, 2009 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Feb 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition and associated method for chemical mechanical planarization (or other polishing) are described. The composition contains an abrasive, benzenesulfonic acid compound, a per-compound oxidizing agent, and water. The composition affords tunability of removal rates for metal, barrier layer materials, and dielectric layer materials in metal CMP processes. The composition is particularly useful in conjunction with the associated method for metal CMP applications (e.g., step 2 copper CMP processes).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.