Patent · US Active

Wafer examination device and wafer examination method

US9201094B2 · kind B2 · utility

1Cited by

6References

11Claims

0Family size

Assignee

TOYOTA JIDOSHA KABUSHIKI KAISHA · JP

Inventors

Hirokazu Fujiwara · Soma, JP
Narumasa Soejima · Nisshin, JP

Key dates

Filing date	Dec 9, 2013
Grant date	Dec 1, 2015
Priority date	—
Expiry date	Feb 26, 2034

Classification

Technology area (CPC H)Electricity
CPC primaryH01L22/00
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A wafer examination device includes a probe, a fusion section and a measurement section. The probe is made of a metal which reacts with silicon carbide to produce silicide. The fusion section fuses the probe to a silicon carbide wafer as an examined object. The measurement section measures an electrical property of the silicon carbide wafer through the fused probe.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.