Magnetoresistance effect element and magnetic memory
US9202545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 25, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/329
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetoresistance effect element including a recording layer of high thermal stability to perform perpendicular magnetic recording within a film surface, and a magnetic memory using the element. The element includes: a first ferromagnetic layer of an invariable magnetization direction; a second ferromagnetic layer of a variable magnetization direction; a first non-magnetic layer between the first and second ferromagnetic layers; current supply terminals connected to the first and second ferromagnetic layers; a non-magnetic coupling layer on a surface of the second ferromagnetic layer opposite the first non-magnetic layer; a third ferromagnetic layer of a variable magnetization direction on a surface of the non-magnetic coupling layer opposite the second ferromagnetic layer; and a second non-magnetic layer on a surface of the third ferromagnetic layer opposite the non-magnetic coupling layer. The second and third ferromagnetic layers have the same magnetization direction and are reversed in magnetization by spin injection with a current.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.