Patent · US Active

Write word-line assist circuitry for a byte-writeable memory

US9202555B2 · kind B2 · utility

16Cited by

7References

20Claims

0Family size

Assignee

QUALCOMM Incorporated · US

Inventors

Changho Jung · Hwaseong-si, KR
Nishith Desai · Austin, US
Sei Seung Yoon · San Diego, US

Key dates

Filing date	Oct 19, 2012
Grant date	Dec 1, 2015
Priority date	—
Expiry date	Sep 16, 2033

Classification

Technology area (CPC G)Physics
CPC primaryG11C11/419
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A write-assisted memory. The write-assisted memory includes a word-line decoder that is implemented within a low VDD power domain. The write-assisted memory also includes a write-segment controller that is partially implemented within the low VDD power domain and is partially implemented within a high VDD power domain. The write-assisted memory further includes a local write word-line decoder that is implemented within the high VDD power domain.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.