Methods for forming crystalline IGZO through annealing
US9202690B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Dec 20, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Dec 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D99/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is provided. An IGZO layer is formed above the substrate. The IGZO layer is annealed in an environment consisting essentially of nitrogen gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.