Polishing liquid for metal and polishing method using the same
US9202709B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2009 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Apr 16, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC09K3/1463
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A liquid for polishing a metal is provided that is used for chemically and mechanically polishing a conductor film including copper or a copper alloy in production of a semiconductor device, and a polishing method using the metal-polishing liquid is also provided. The liquid includes: (a) colloidal silica particles having an average primary particle size of from 10 nm to 25 nm and an average secondary particle size of from 50 nm to 70 nm; (b) a metal anticorrosive agent; (c) at least one compound selected from the group consisting of a surfactant and a water-soluble polymer compound; (d) an oxidizing agent; and (e) an organic acid.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.