Semiconductor device with first and second semiconductor substrates
US9202752B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 5, 2010 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Mar 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15788
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first semiconductor substrate including a first integrated circuit, a second semiconductor substrate mounted over the first semiconductor substrate, the second semiconductor substrate including a second integrated circuit, a post made of an inorganic substance and formed over the first semiconductor substrate, an adhesive layer made of an organic substance arranged between the first and the second semiconductor substrates, and a substrate-through-via made of an electrical conductor extending through the second semiconductor substrate and the post, the substrate-through-via extending to the first semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.