Semiconductor device with air gap and method for fabricating the same
US9202774B2 · kind B2 · utility
9Cited by
0References
19Claims
0Family size
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Key dates
| Filing date | Dec 15, 2013 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Dec 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a plurality of first conductive structures formed over a substrate, second conductive structures each formed between neighboring first conductive structures of the first conductive structures, air gaps each formed between the second conductive structures and the neighboring first conductive structures thereof, third conductive structures each capping a portion of the air gaps, and capping structures each capping the other portion of the air gaps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.