Voltage switchable non-local spin-FET and methods for making same
US9202899B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 25, 2015 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | Mar 25, 2035 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A voltage switchable non-local spin-FET is disclosed which provides a layer of chromia over a ferromagnetic substrate, such as cobalt. A film of graphene overlays the chromia, with a protective layer of metal oxide like cobalt oxide or iron oxide there between to prevent catalytic degradation of the graphene, which may occur. The graphene is provided with a contact, or source and drain, depending on the application. The spin-FET, which exhibits magnetic remanence, may be provided with a top gate of, e.g., cobalt or other ferromagnet such as iron. As an alternative to the ferromagnetic substrate, the device may be formed on a silicon or gallium arsenide base, or directly on a metal interconnect of an integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.