Digital alloy layer in a III-nitrade based heterojunction field effect transistor

US9202905B1 · kind B1 · utility

Assignee

• TriQuint Semiconductor, Inc. · US

Inventors

• Jinqiao Xie · Allen, US
• Edward A. Beam, III · Dallas, US
• Ming-Yih Kao · Glendale, US
• Hua Q. Tserng · Dallas, US
• Paul Saunier · Garland, US

Key dates

• Filing date: Sep 8, 2014
• Grant date: Dec 1, 2015
• Expiry date: Sep 8, 2034

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/8503

Abstract

Embodiments include apparatuses and methods related to an HFET. In embodiments, one or all of the buffer layer, the back-barrier layer, or the barrier layer may be formed of a digital alloy. In embodiments, the digital alloy may include alternating layers of alloys of aluminum, gallium, and nitrogen. Other embodiments may be disclosed or claimed herein.