Lateral power semiconductor device and method for manufacturing a lateral power semiconductor device

US9202910B2 · kind B2 · utility

Assignee

• Infineon Technologies Austria AG · AT

Inventors

• Anton Mauder · Kolbermoor, DE
• Norbert Thyssen · Dresden, DE
• Rolf Weis · Dresden, DE

Key dates

• Filing date: Apr 30, 2013
• Grant date: Dec 1, 2015
• Expiry date: Dec 7, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/127

Abstract

A lateral power semiconductor device includes a semiconductor body having a first surface and a second opposite surface, a first main electrode, a second main electrode, a plurality of switchable semiconductor cells and at least one curved semiconductor portion. The first main electrode includes at least two sections and is arranged on the first surface. The second main electrode is arranged on the first surface and between the two sections of the first main electrode. The plurality of switchable semiconductor cells is arranged between a respective one of the two sections of the first main electrode and the second main electrode and is configured to provide a controllable conductive path between the first main electrode and the second main electrode. The curved semiconductor portion is between the first main electrode and the second main electrode and has increasing doping concentration from the first main electrode to the second main electrode.