Semiconductor device
US9202937B2 · kind B2 · utility
0Cited by
2References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 14, 2010 |
| Grant date | Dec 1, 2015 |
| Priority date | — |
| Expiry date | May 14, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/117
Abstract
A semiconductor device comprising: a p or p+ doped portion; an n or n+ doped portion separated from the p or p+ doped portion by a semiconductor drift portion; an insulating portion provided adjacent the drift portion and at least one of the doped portions in a region where the drift portion and said at least one doped portion meet; and at least one additional portion which is arranged for significantly reducing the variation of the electric field strength in said region when a voltage difference is applied between the doped portions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.