Method for the controlled growth of a graphene film
US9206509B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Oct 16, 2009 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Oct 16, 2029 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/02
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention includes a controlled graphene film growth process including the production on the surface of a substrate of a layer of a metal having with carbon a phase diagram such that, above a molar concentration threshold ratio CM/CM+CC, where CM is the molar metal concentration in a metal/carbon mixture and CC is the molar carbon concentration in the mixture, a homogeneous solid solution is obtained. The metal layer is exposed to a controlled flux of carbon atoms or carbon-containing radicals or carbon-containing ions at a temperature such that the molar concentration ratio obtained is greater than the threshold ratio to obtain a solid solution of carbon in the metal. The process further includes an operation for modifying the phase of the mixture into two phases, a metal phase and a graphite phase, leading to the formation of at least a lower graphene film at the metal layer incorporating carbon atoms-substrate interface and an upper graphene film at the surface of the metal layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.