Semiconductor substrate and method of manufacturing
US9209018B2 · kind B2 · utility
2Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2012 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Oct 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2224/03848
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a substrate includes forming a base layer comprising a Group III-V material on a substrate, cooling the base layer and inducing cracks in the base layer, and forming a bulk layer comprising a Group III-V material on the base layer after cooling.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.