Plasma etching method and plasma etching apparatus
US9209034B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 31, 2013 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Jan 31, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a plasma etching method for etching a metal layer of a substrate to be processed through a hard mask by using a plasma etching apparatus, a first step in which a first etching gas comprising a mixed gas of O2, CF4 and HBr is used as an etching gas, and a second step in which a second etching gas comprising a mixed gas of O2 and CF4 is used as an etching gas, are continuously and alternately repeated a plurality of times. At this time, a first high-frequency power of a first frequency and a second high-frequency power of a second frequency, which is lower than the first frequency, are applied to a lower electrode, and the first high-frequency power is applied in a pulse form.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.