Patent · US Active

Gap-fill methods

US9209067B2 · kind B2 · utility

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6References
10Claims
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Key dates

Filing dateNov 14, 2014
Grant dateDec 8, 2015
Priority date
Expiry dateNov 14, 2034

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76224
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

Provided are gap-fill methods. The methods comprise: (a) providing a semiconductor substrate having a relief image on a surface of the substrate, the relief image comprising a plurality of gaps to be filled; (b) applying a gap-fill composition over the relief image, wherein the gap-fill composition comprises a self-crosslinkable polymer and a solvent, wherein the self-crosslinkable polymer comprises a first unit comprising a polymerized backbone and a crosslinkable group pendant to the backbone; and (c) heating the gap-fill composition at a temperature to cause the polymer to self-crosslink. The methods find particular applicability in the manufacture of semiconductor devices for the filling of high aspect ratio gaps.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.