Passivation structure and method of making the same
US9209102B2 · kind B2 · utility
2Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Oct 20, 2014 |
| Grant date | Dec 8, 2015 |
| Priority date | — |
| Expiry date | Oct 20, 2034 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A passivation structure includes a bottom dielectric layer. The passivation structure further includes a doped dielectric layer over the bottom dielectric layer. The doped dielectric layer includes a first doped layer and a second doped layer. The passivation structure further includes a top dielectric layer over the doped dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.