Ming-Yi Lin
41Patents
7h-index
53Co-inventors
72Inventor score
Filing activity: Feb 13, 1998 → May 16, 2022
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6001690A | Method of forming flash EPROM by using iso+aniso silicon nitride spacer etching technology | Electricity | 19 | Expired |
| US9405879B2 | Cell boundary layout | Physics | 13 | Active |
| USD507623S1 | Line guide for fishing rod | General | 12 | Expired |
| US9551923B2 | Cut mask design layers to provide compact cell height | Electricity | 10 | Active |
| USD552209S1 | Fishing rod connector | General | 9 | Expired |
| USD439301S | Fishing rod roller guide | General | 9 | Expired |
| USD425964S | Fishing rod roller guide | General | 7 | Expired |
| USD503453S1 | Fishing rod roller guide | General | 6 | Expired |
| USD516163S1 | Reel seat for fishing rod | General | 6 | Expired |
| US9839038B2 | System, method, and apparatus for setting a regulatory operating mode of a device | Electricity | 5 | Active |
| USD516665S1 | Reel seat for fishing rod | General | 4 | Expired |
| USD423636S | Fishing rod roller guide | General | 4 | Expired |
| US7642152B2 | Method of fabricating spacers and cleaning method of post-etching and semiconductor device | Emerging Cross-Sectional Technologies | 3 | Active |
| USD483435S1 | Fishing rod roller guide | General | 3 | Expired |
| USD546917S1 | Fishing rod connector | General | 3 | Expired |
| US9082789B2 | Fabrication methods of integrated semiconductor structure | Electricity | 2 | Active |
| US9209102B2 | Passivation structure and method of making the same | Electricity | 2 | Active |
| US9853121B2 | Method of fabricating a lateral insulated gate bipolar transistor | Electricity | 2 | Active |
| USD419635S | Fishing rod roller guide | General | 2 | Expired |
| USD532073S1 | Top guide for fishing rod | General | 2 | Expired |
| US8410632B2 | Power adapter having multi-DC power connectors | Electricity | 2 | Active |
| US8884405B2 | Passivation scheme | Electricity | 2 | Active |
| US8779555B2 | Partial SOI on power device for breakdown voltage improvement | Electricity | 1 | Active |
| US9076837B2 | Lateral insulated gate bipolar transistor structure with low parasitic BJT gain and stable threshold voltage | Electricity | 1 | Active |
| US9698024B2 | Partial SOI on power device for breakdown voltage improvement | Electricity | 1 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.